CERAMIC HEATER FOR SEMICONDUCTOR MANUFACTURING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a ceramics heater for a semiconductor manufacturing device in which heat radiation from the periphery surface of wafer laid on a ceramics heater is suppressed without generating crack at the time of a heating process, and the soaking nature of the front surface of wafer is raised. SOLUTION: A ceramic heater 1 for a semiconductor manufacturing device having a resistor heating element 3 on the front surfaces or in the interior of ceramics substrates 2a and 2b has a wafer pocket 5 comprising a concave portion for housing and holding wafer on the surface of a side at which wafer is held. In the wafer pocket 5, an angle which a periphery interior side surface and a bottom surface make exceeds 90°and is 170°or less, and/or the curvature of a bottom periphery border which connects the periphery interior side surface and the bottom surface is 0.1 mm or more. In the ceramics heater 1, a plasma electrode may be arranged on the surfaces or in the interior of the ceramics substrates 2a and 2b. COPYRIGHT: (C)2007,JPO&INPIT