POROUS THIN FILM, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE USING IT

摘要

PROBLEM TO BE SOLVED: To provide a low dielectric constant thin film which is easily formed at a high speed. SOLUTION: This method comprises steps of: supplying a hole generating material and a framework generating material to the surface of a substrate by vapor phase; forming a thin film wherein the framework generated by the framework generating material is so demarcated as to enclose the hole generating material on the substrate surface; and forming holes by removing the hole generating material from the thin film to form a porous thin film which is so formed that the framework encloses the holes. COPYRIGHT: (C)2007,JPO&INPIT