| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer from which a dislocation is removed, which can be reduced in LPD and haze, and of which the main surface is ä110}. SOLUTION: In the method of manufacturing an epitaxial silicon wafer, a single crystal without dislocation added with 5×10<SP>18</SP>atoms/cm<SP>3</SP>or more of boron as a seed crystal is immersed in a silicon melt, a grown crystal having a boron concentration the same as the boron concentration of the seed crystal is pulled up taking the <110> direction of the single crystal without dislocation as axis to form a single crystal silicon ingot, silicon single crystal substrates are cut out by slicing the single crystal silicon ingot, and an epitaxial layer is formed in the silicon single crystal substrate. COPYRIGHT: (C)2007,JPO&INPIT
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