发明名称 Method and Structure for Electrostatic Discharge Protection of Photomasks
摘要 A mask for manufacturing integrated circuits and use of the mask. The mask has a mask substrate. The mask also has an active mask region within a first portion of the mask substrate. The active region is adapted to accumulate a pre-determined level of static electricity. The mask also has a first guard ring structure surrounding a portion of the active mask region to isolate the active region from an outer region of the mask substrate and a second guard ring structure having at least one fuse structure surrounding a portion of the first guard ring structure. The fuse structure is operably coupled to the active region to absorb a current from static electricity. The static electricity is accumulated by the active region to the pre-determined level and being discharged as current to the fuse structure while maintaining the active region free from damage from the static electricity.
申请公布号 US2007066006(A1) 申请公布日期 2007.03.22
申请号 US20060552142 申请日期 2006.10.23
申请人 SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION 发明人 KUO KUEI-CHI
分类号 H01L21/8238;G03F1/00;G03F1/14;H01L21/027;H01L21/331;H01L21/336;H01L21/44;H01L21/82;H01L23/58;H01L29/00 主分类号 H01L21/8238
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