| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for reducing thermal resistance to improve the heat dissipating property of the power element, in a semiconductor device equipped with a power element. SOLUTION: The semiconductor device is equipped with vertical type semiconductor elements 11-14 constituted so as to make current flow between a source pad formed on the front surface side of the semiconductor substrate and a drain pad formed on the rear surface of the substrate, lead wires 31-34, 41-44 and ribbon lead wires 21-24 as wirings and heat sinks, and resin 90 which seals one end side of the semiconductor elements 11-14 and lead wires 31-34, 41-44. In this case, lead wires 41-44 are connected directly to respective drain pads of respective semiconductor elements 11-14 while one of the ribbon lead wires 21-24 are connected directly to respective source pads of respective semiconductor elements 11-14, and the other parts are connected to the lead wires 31-34. COPYRIGHT: (C)2007,JPO&INPIT
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