CLEANING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a cleaning method capable of selectively removing an etching residual comprising a metal compound or a polishing residual against a wiring material, and to provide a method for manufacturing a semiconductor device. SOLUTION: The cleaning method and a method for manufacturing the semiconductor device includes the steps of: depositing an interlayer insulating film including a low dielectric constant insulating film 20 and a low dielectric constant insulating film 22 on a substrate with a lower layer wiring 18 provided; next, forming a contact hole 24 by etching the interlayer insulating film; forming a wiring groove 25 communicating with the upper part of the contact hole 24; exposing the lower layer wiring 18 at the bottom of the contact hole 24; and subsequently, feeding a supercritical carbon dioxide liquid containing at least one of a triallyl amine and a tris-(3-aminopropyl)amine to the surface of the substrate in this state and cleaning to remove the etching residual including the metal compound 18' from the lower layer wiring 18. COPYRIGHT: (C)2007,JPO&INPIT