HETEROJUNCTION BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor having a structure showing a good property without requiring any special wiring formation process such as an air bridge or the like in an HBT in which a mesa formation is performed by a dry etching. SOLUTION: A heterojunction bipolar transistor 100 is equipped with: at least an O3-TEOS film 132 which is formed in a lower layer of a drawer wiring 121 connected with a base electrode 112 formed in a base layer 104; and an SiO2film 131 having a film thickness of 200 nm or more which is formed in a lower layer of the O3-TEOS film 132. COPYRIGHT: (C)2007,JPO&INPIT