| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device having a high reliability by arranging a surface film which is simple-structured and hardly suffers from COD deterioration on an end face of a resonator. SOLUTION: The semiconductor laser device comprises the main body 36 of a semiconductor laser having a front end face 24 which is a main light emission end face and a rear end face opposite to the front end face 24, with a portion between both end faces serving for the resonator 22; an aluminum oxide film 38 as a reflectivity control film which is formed on the front end face 24 or the rear end face 26 of the main body 36 of the semiconductor laser or a five-layer film 42, wherein the aluminum oxide film 38 is arranged in a layer most removed from the front end face 24 or the rear end face 26; and a silicon oxide film 40 which is formed on the aluminum oxide film 38 as the reflectivity control film and has a thickness of 20 nm or less. COPYRIGHT: (C)2007,JPO&INPIT
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