| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for film forming which provide high and stable uniformity in in-surface film thickness of a wafer. SOLUTION: The film forming device comprises: a reactive chamber 2 for forming a film on a wafer 1, a susceptor 3 on which a plurality of wafers 1 are placed in the reactive chamber 2; a heating means 6 for heating the wafer 1 through the susceptor 3, a gas supply nozzle 5 for supplying a film forming gas on the wafer 1; and a lift mechanism 9 for vertically moving the gas supply nozzle 5. Thus, film-forming of high uniformity in in-surface film thickness is allowed. COPYRIGHT: (C)2007,JPO&INPIT
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