发明名称 |
Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same |
摘要 |
In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption layer on the object. A second gas including oxygen is provided onto the silicon-rich chemisorption layer to form a silicon-rich insulation layer on the object. A third gas including a second silicon compound is provided onto the silicon-rich insulation layer to form a silicon nanocrystalline layer on the silicon-rich insulation layer. The first gas, the second gas and the third gas may be repeatedly provided to alternately form the silicon-rich nanocrystalline structure having a plurality of silicon-rich insulation layers and a plurality of silicon nanocrystalline layers on the object.
|
申请公布号 |
US2007066083(A1) |
申请公布日期 |
2007.03.22 |
申请号 |
US20060494451 |
申请日期 |
2006.07.28 |
申请人 |
YANG SANG-RYOL;JOO KYONG-HEE;YEO IN-SEOK;HWANG KI-HYUN;LIM SEUNG-HYUN |
发明人 |
YANG SANG-RYOL;JOO KYONG-HEE;YEO IN-SEOK;HWANG KI-HYUN;LIM SEUNG-HYUN |
分类号 |
H01L21/31;H01L21/469;H01L21/4763 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|