| 摘要 |
<p>A pattern forming apparatus and a method are provided to perform quickly a photoresist pattern forming process and to improve productivity by removing selectively a photoresist layer from a substrate at one time using predetermined plasma. A pattern forming apparatus includes a first electrode, a second electrode, a power source, a gas nozzle, and pattern through holes. The first electrode(20) includes a first dielectric film. The first electrode is grounded. The second electrode(24) is spaced apart from the first electrode. The second electrode includes a second dielectric film. The power source(28) is used for forming an electric field between the first and second electrodes. The gas nozzle(30) is used for supplying a predetermined gas into a predetermined space between the first and second electrodes. The pattern through holes(34) are formed in the second dielectric film of the second electrode in order to apply selectively a predetermined plasma onto a photoresist layer of a substrate, wherein the predetermined plasma is obtained from the predetermined gas under the electric field condition.</p> |
