| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor memory having a highly precise ferroelectric capacitor in a simplified process. SOLUTION: A tungsten plug 31 is formed by embedding metal materials such as W in a contact hole 8a formed in an inter-layer insulating film 8, and the top end of the tungsten plug 31 is projected by etching back the inter-layer insulating film 8 only by predetermined thickness. Then, a Pt film, a ferroelectric film, and a Pt film configuring a ferroelectric capacitor, are successively formed. Then, those Pt film, ferroelectric film and Pt film are patterned by end batch etching, and a ferroelectric capacitor is structured by holding a ferroelectric film 33 between platinum electrodes 32 and 34. COPYRIGHT: (C)2007,JPO&INPIT
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