SEMICONDUCTOR SUBSTRATE HAVING SHALLOW TRENCH ISOLATION STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate having a shallow trench isolation structure with high integration density in which crystal defects generated in an element formation region are reduced. SOLUTION: The semiconductor device is provided with: a plurality of grooves 6 formed on a part of surface of semiconductor substrate making a shallow trench; the buried oxide films 71 formed in the grooves 6 by an organic silicon system CVD method, being heat-treated at a temperature within the range of 1,100°C to 1,350°C except 1,100°C after deposition by the organic silicon system CVD method, and consisting of oxide films in which moisture is dissociated in the grooves 6; an element formation region 5 formed between the groove 6 and the groove 6, having a dislocation density less than 1 piece/μm2; and transistors (91, 92) formed in the element formation region 5. COPYRIGHT: (C)2007,JPO&INPIT