| 摘要 |
PROBLEM TO BE SOLVED: To prevent electrons from being extracted from floating gates in a readout operation. SOLUTION: A semiconductor memory device is equipped with select gates 3a arranged in a first region on a substrate 1 through an insulating film 2, floating gates 6a arranged in a second region adjacent to the first region through an insulating film 5, a first and a second diffusion regions 7a and 7b arranged in a third region adjacent to the second region, and a control gate 11 arranged on the floating gate 6a through an insulating film 8. The control gate 11 intersects with the select gates 3a at two different levels, a third diffusion region 21 is provided in a fourth region located on the extensions of the select gates 3a on the surface of the substrate 1, and the floating gate 6a is formed into a sidewall shape and has a rounded part 6b at its upper end close to the side wall surface of the select gate 3a. COPYRIGHT: (C)2007,JPO&INPIT
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