| 摘要 |
PROBLEM TO BE SOLVED: To suppress the deterioration of the characteristics of a semiconductor element formed on a substrate and the lowering of a yield by the anisotropy of a coefficient of a thermal expansion or the coefficient of a thermal contraction in the face direction of the substrate. SOLUTION: A thin-film transistor is formed on the plastic-film substrate 1 having the anisotropy of the coefficient of the thermal expansion or the coefficient of the thermal contraction in the face direction of the substrate. A channel is formed so that the direction 7 of the largest coefficient of the thermal expansion runs antiparallel with the direction 8 making a current flow in the channel for the thin-film transistor. Consequently, the upper section of the plastic-film substrate is provided with the thin-film transistor having stable and uniform electrical characteristics. COPYRIGHT: (C)2007,JPO&INPIT
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