| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide semiconductor element having a low contact resistance between an electrode layer and a semiconductor layer, and having excellent adhesive properties and stability with time. SOLUTION: Adhesion improving layers 106 for improving adhesive properties between an oxide semiconductor layer and a precious-metal electrode are dispersed and arranged between the oxide semiconductor layer and the precious-metal electrode, and have sections in which the oxide semiconductor layer and the precious-metal electrode are brought into contact. The adhesion improving layers 106 are dispersed insularly or in a striped form. The adhesion improving layer 106 has a thickness of 10 nm or less, and contains at least one of Ti, Ni, Cr, V, Hf, Zr, Nb, Ta and Mo or W. At least one of Au, Pt or Pd is contained as a material for the previous-metal electrode 103. COPYRIGHT: (C)2007,JPO&INPIT
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