| 摘要 |
PROBLEM TO BE SOLVED: To reasonably realize potential slope under a transfer electrode, and also to realize improvement of transfer efficiency of charge transfer route without use of the existing method for controlling impurity concentration profile by utilizing the existing flexible semiconductor device manufacturing process technology. SOLUTION: A potential (PL) is sloped by increasing step by step the thickness of insulating films (81a to 81e) under the same transfer electrode 20 toward the charge transfer direction. That is, potential of the thin insulating film just under the transfer electrode becomes shallow but potential of the thick insulating film becomes deep. Therefore, as the region goes to the regions a, b, c, d, and e, the potential (PL) becomes deeper, forming thereby slope therein. Accordingly, sufficient transfer field can be obtained and the transfer efficiency can also be improved. COPYRIGHT: (C)2007,JPO&INPIT
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