| 摘要 |
PROBLEM TO BE SOLVED: To improve a current gain by depleting completely up to an end of a gate electrode on a drain side in a channel region without providing a pocket injection region. SOLUTION: The semiconductor device comprises an n-type well region 102 formed on an upper part of a semiconductor substrate 100; a gate electrode 104 formed on the semiconductor substrate 100; a threshold voltage control layer 106 formed underneath the gate electrode 104 in the well region 102, and at a position of n-type impurity concentration whose peak position is shallower than the well region 102 for controlling threshold voltage; a p-type LDD region 107 formed in a region between a lower side of opposite ends of the gate electrode 104 on the side in a gate length direction in the well region 102 and the threshold voltage control layer 106; and a p-type source region 108S and a drain region 108D formed, each connected with the outside of the LDD region 107. A junction face is protruded upward between the threshold voltage control layer 106 and the LDD region 107. COPYRIGHT: (C)2007,JPO&INPIT
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