发明名称 |
Field-effect transistor, single-electron transistor and sensor using the same |
摘要 |
A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistor 1 A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1 A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1 A. |
申请公布号 |
US2007063304(A1) |
申请公布日期 |
2007.03.22 |
申请号 |
US20040570279 |
申请日期 |
2004.08.27 |
申请人 |
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发明人 |
MATSUMOTO KAZUHIKO;KOJIMA ATSUHIKO;NAGAO SATORU;KATOU MASANORI;YAMADA YUTAKA;NAGAIKE KAZUHIRO;IFUKU YASUO;MITANI HIROSHI |
分类号 |
H01L31/06;G01N27/414;H01L29/06;H01L29/66;H01L29/80 |
主分类号 |
H01L31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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