| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce costs and to improve performances of a power amplification module, an integrated passive part used for it, and a semiconductor chip. <P>SOLUTION: In an integrated passive part 5, an inductor element constituting a lowpass filter circuit of an RF power module is formed using a wiring 55 comprising a laminated film consisting of a seed film 51, copper film 53, and nickel film 54. The nickel film 54 is formed on the entire surface of the copper film 53, and a gold film 63 and a bump electrode 64 are formed on the nickel film 54 exposed from an opening 62 of an insulating film 61 as a surface protecting film. The nickel film 54 is an electroless Ni-P plating film, and contains phosphor by 10 wt.% or more in nonmagnetic state. <P>COPYRIGHT: (C)2007,JPO&INPIT |
