| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory element which has a large change in resistance and reduces read-out errors. <P>SOLUTION: The memory element 3 includes a memory layer 17 which holds information by the magnetized state of a magnetic material. With respect to the memory layer 17, a magnetization-fixed layer 31 is formed via an intermediate layer 16. The intermediate layer 16 is formed of a magnesium oxide, and the memory layer 17 or at least one layer out of ferromagnetic layers 17, 13, and 15 which constitute the magnetization-fixed layer 31 is mainly formed of at least one kind selected among Co and Fe, while at the same time containing 5 to 20 atomic% of at least one kind selected among V, Cr, and Nb. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
