| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution which attains satisfactory dishing performance of a matter to be polished which is used for chemical and mechanical flattening in manufacturing of a semiconductor device, and to provide a chemical and mechanical polishing method excellent in uniformity of polishing using such a polishing solution. <P>SOLUTION: The polishing solution is used for chemical and mechanical flattening in manufacturing of the semiconductor device, and a polishing speed ratio when the temperature of a wafer polishing surface is 40°C and 25°C temperature of a wafer polishing surface ((a polishing speed when the temperature of the wafer polishing surface is 40°C)/(a polishing speed when the temperature of the wafer polishing surface is 25°C)) is not larger than 3. In order to attain the polishing speed ratio, it is desirable to add a compound adsorbed to the wafer polishing surface to set an adsorption amount ratio to the wafer polishing surface of the compound ((adsorption amount to the wafer polishing surface at 40°C)/(adsorption amount to the wafer polishing surface at 25°C)) to be not larger than 0.7. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
