| 摘要 |
PROBLEM TO BE SOLVED: To provide a TMR element or the like capable of performing high-temperature annealing treatment. SOLUTION: A TMR element 51 is provided with a TMR film 53 including an antiferromagnetic layer 61, a pinned layer 63, a barrier layer 65, and a free layer 67; and a lower magnetic shield film 55 provided at the lower part in the laminating direction of the TMR film. The barrier layer comprises a magnesium oxide, and the lower magnetic shield film has a multilayer structure including a crystalline layer 71 and an amorphous layer 73 provided at the upper part in its laminating direction. The crystalline layer contains at least one crystal grain having a grain diameter of 500 nm or more. COPYRIGHT: (C)2007,JPO&INPIT
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