BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor having high-speed operation capability and high-current driving force, and also to provide a manufacturing method for the bipolar transistor. SOLUTION: The bipolar transistor comprises: a Si single-crystal layer 3 functioning as a collector; a single-crystal Si/SiGeC layer 30a and a polycrystalline Si/SiGeC layer 30b that are formed on the Si single-crystal layer 3; an oxide film 31 having an emitter opening, an emitter electrode 50; and an emitter layer 35. An intrinsic base layer 52 is formed on the single-crystal Si/SiGeC layer 30a. A part of the single-crystal Si/SiGeC layer 30a, the polycrystalline Si/SiGeC layer 30b, and a Co silicide layer 37b combine to compose an external base layer 51. The thickness of the emitter electrode 50 is determined to be a thickness that prevents boron injected into the emitter electrode 50 from diffusing into the emitter electrode 50 and reaching an emitter-base junction. COPYRIGHT: (C)2007,JPO&INPIT