CHARGE TRAP TYPE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a charge trap type memory device using the complex of a nano particle and the method of manufacturing the same. SOLUTION: There are provided a charge trap type memory device comprising a substrate and a gate structure having a charge trap layer formed of the complex of a nano particle on the substrate, and the method of manufacturing the same. Since the nano particle of good charge trap nature exists between insulating nano particles, a phenomenon is not caused in which metal nano particles mutually gather and which became a problem in the case of the formation of a memory by use of the existing nano particle of good charge trap nature. Further, excellent retention property can be possessed by allowing the nano particle of good charge trap nature to comprise the charge trap layer comprising the complex of the insulating nano particle. COPYRIGHT: (C)2007,JPO&INPIT