| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve conductivity between a capacitor electrode and a contact plug, and to provide its manufacturing method. SOLUTION: The semiconductor device has an insulating film 15-1; a contact plug 16 which is provided in the insulating film and is primarily composed of metal; a first adhesion film 33-1 which is provided on the insulating film, has higher oxygen affinity than the metal, and is primarily composed of an oxide; a first capacitor electrode 21 which is provided on the contact plug and on the first adhesion film, and works to prevent diffusion of oxygen; a capacitor insulating film 22 provided on the first capacitor electrode; and a second capacitor electrode 23 provided on the capacitor insulating film. COPYRIGHT: (C)2007,JPO&INPIT
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