| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a polycrystalline silicon film in which a lightly doped metal layer having a uniform distribution of metal particles is formed on a glass substrate, and in which crystallization of amorphous silicon is accelerated by the metal to fundamentally reduce contamination due to the metal particles while lowering the temperature of crystallization. SOLUTION: The method includes: a step of adsorbing metal nuclei in which a metal compound of a vapor phase is introduced into a processing space where a glass substrate is arranged with an amorphous silicon formed, to adsorb metal nuclei included in the metal compound as a catalysis; a step of forming distribution regions of metal nuclei in which a plurality of amorphous silicon particles is included in each of occupation plane bounded regions preoccupied by the metal compound inclusive of metal nuclei through a self-limited mechanism that works in the metal nucleus adsorption to form colony regions, each of which includes a multitude of silicon particles per metal nucleus depending on a region occupied by a metal molecule; and a step of purging a surplus gas in which a surplus gas that has been left unadsorbed in the step of forming distribution regions of metal is purged to eliminate the surplus gas. COPYRIGHT: (C)2007,JPO&INPIT |
