发明名称 |
Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device |
摘要 |
Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.
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申请公布号 |
US2007064468(A1) |
申请公布日期 |
2007.03.22 |
申请号 |
US20060517030 |
申请日期 |
2006.09.07 |
申请人 |
SEOL KWANG-SOO;JUN SHIN-AE;JANG EUN-JOO;LIM JUNG-EUN;CHO KYUNG-SANG;KIM BYUNG-KI;LEE JAE-HO;CHOI JAE-YOUNG |
发明人 |
SEOL KWANG-SOO;JUN SHIN-AE;JANG EUN-JOO;LIM JUNG-EUN;CHO KYUNG-SANG;KIM BYUNG-KI;LEE JAE-HO;CHOI JAE-YOUNG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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