发明名称 Semiconductor device having pattern-dummy and method for manufacturing the same using pattern-dummy
摘要 A semiconductor device includes a main pattern disposed to overlap with an active region that is surrounded by a device isolating region, and the dummy pattern disposed on the device isolating region to be spaced apart from the active region by a predetermined distance. A distance between the dummy pattern and the active region is determined in accordance with a predetermined design rule. In particular, the semiconductor device includes a plurality of connector dummy patterns or auxiliary dummy patterns to achieve a stabilized firm dummy pattern.
申请公布号 US2007063223(A1) 申请公布日期 2007.03.22
申请号 US20050321764 申请日期 2005.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI JAE S.
分类号 H01L27/10;G03F1/36;G03F1/68;H01L21/027;H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L27/10
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