| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor device by which, when an element unit manufactured on a substrate through a wafer process is separated into chips, the number of steps for polishing, cutting or the like can be reduced and the substrate can be repeatedly used. <P>SOLUTION: The method of manufacturing the nitride semiconductor device uses a nitride semiconductor defect position control substrate S (Al<SB>x</SB>In<SB>y</SB>Ga<SB>1-x-y</SB>N: 0≤x≤1, 0≤y≤1, x+y≤1) wherein a defect aggregation area H that shows a closed curve and is aggregated by low-crystal-growth-speed defects and a low-crystal-growth-speed low defect area ZY are positionally predetermined. A nitride semiconductor layer (upper layer B) is subjected to epitaxial growth on a gallium nitride substrate, so that the inside of the device may be in the low defect area ZY and a boundary be in the defect aggregation area H respectively, and the defect position control substrate S and a growth layer (upper layer B) are simultaneously separated in vertical and horizontal directions by laser irradiation or by using a mechanical means. The substrate is repeatedly used. <P>COPYRIGHT: (C)2007,JPO&INPIT |
