| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide electrodes capable of obtaining intense light emission with a low driving voltage without degrading crystallinity. <P>SOLUTION: In the structure of the electrodes for a semiconductor light emitting device, one electrode of n-type or p-type and the other electrode of p-type or n-type opposed thereto are provided on the same surface of the light emitting device. Both of the electrodes consist of a bonding pad and a transparent conductive layer. The light emitting device is a GaN-based semiconductor light emitting device etc. For the transparent conductive layer, an oxide such as ITO etc., and/or a metal such as Al, Ni etc. are used. <P>COPYRIGHT: (C)2007,JPO&INPIT |
