| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a low-cost, high-quality, and high-performance element by solving problems in the manufacturing method of an oxide semiconductor device including FETs using an oxide semiconductor. <P>SOLUTION: In the manufacturing method of FETs using an oxide semiconductor as a channel layer 14, short-wavelength light or a high-energy particle is applied to a desired location of the oxide semiconductor for forming the channel layer 14. Then, by forming a drain 15 and a source 16 having high conductivity on the channel layer 14 having low conductivity, FETs are manufactured for keeping the interface state of the channel layer 14 appropriately. Or a light catalyst is brought into contact with a desired location in the oxide semiconductor having high conductivity, and light is applied to the light catalyst, thus forming a low-conductivity section in the oxide semiconductor. The low-conductivity section is used for the channel layer, thus manufacturing FETs for keeping the interface state of the channel layer appropriately. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
