| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a copper interconnect integrating an air gap as an inter-layer insulator, or an in-layer insulator and the inter-layer insulator. SOLUTION: The method for forming an inter-layer insulating structure includes: a process for providing a first metal layer; a process for depositing a first sacrifice layer; a process for depositing an etching stop layer; a process for depositing a second sacrifice layer; a process for forming a two-layer hard mask; a process for producing a via mask and a trench mask by patterning the two-layer hard mask; a process for etching the second sacrifice layer, and forming a via; a process for etching a stripped part of the etching stop layer and the first sacrifice layer, and stripping the first metal layer; a process for etching the second sacrifice layer, and forming a trench; a process for depositing barrier metal and copper, and flattening the same to form a second metal layer; and a process for decomposing the first and second sacrifice layers, and replacing the sacrifice layers with the air gap. COPYRIGHT: (C)2007,JPO&INPIT |
