METHOD OF MANUFACTURING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of stably manufacturing an oxide having an electron carrier concentration of less than the level of 1018/cm3. SOLUTION: The method of manufacturing a thin film transistor having an active layer of a transparent oxide film containing In, Zn and O at an electronic carrier concentration of less than the level of 1018/cm3, a source electrode, a drain electrode, a gate insulation film, and a gate electrode comprises a step of forming the active layer by the sputtering method in an atmosphere gas containing water. COPYRIGHT: (C)2007,JPO&INPIT