发明名称 |
METHOD AND APPARATUS FOR PRODUCING PROTECTIVE FILM |
摘要 |
<p>Disclosed is an apparatus for producing a protective film, which comprises a film formation chamber (32), a gas feed port (47) for introducing at least a gas into the film formation chamber (32), an exhaust pump (43) for exhausting the film formation chamber (32), a cryotrap for controlling the exhaust rate of water independently from the exhaust pump (43), and a temperature control unit for controlling the cooling temperature of the cryotrap. By controlling the exhaust rate of water through control of the cooling temperature of the cryotrap, a protective film which is likely to be affected by the partial pressure of water can be stably produced under the same conditions all the time. Consequently, there can be obtained a protective film having sputtering resistance, which is excellent in secondary electron emission characteristics.</p> |
申请公布号 |
WO2007032303(A1) |
申请公布日期 |
2007.03.22 |
申请号 |
WO2006JP317966 |
申请日期 |
2006.09.11 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;OOE, YOSHINAO;UETANI, KAZUO;SHIOKAWA, AKIRA;MIZOKAMI, KANAME;KADOU, HIROYUKI |
发明人 |
OOE, YOSHINAO;UETANI, KAZUO;SHIOKAWA, AKIRA;MIZOKAMI, KANAME;KADOU, HIROYUKI |
分类号 |
C23C14/24;H01J9/02;H01J11/02;H01J11/12;H01J11/22;H01J11/24;H01J11/26;H01J11/34;H01J11/40 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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