| 摘要 |
PROBLEM TO BE SOLVED: To provide a split-type nonvolatile storage unit where conductive stringers do not remain between primary conductive film patterns, and also to provide its manufacturing method. SOLUTION: The storage unit is equipped with: an active region 51 arranged on a semiconductor substrate; a pair of primary conductive film patterns 56a formed on the active region 51; a charge storage layer 54 existing between the pair of primary conductive film patterns 56a and an active region 51, a pair of wordlines WL formed on the active region 51 that partially overlap the upper part of the primary conductive film patterns 56a respectively, and a gate insulating film 64 existing between the wordlines WL and the active region 51. Primary conductive film patterns 56a symmetrical to each other form secondary conductive film patterns 66 on the primary conductive film patterns 56a formed on the active region 51, and then form the secondary conductive film patterns 66 and primary conductive film patterns 56a by sequencial patterning. COPYRIGHT: (C)2007,JPO&INPIT
|
