| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose gate-electrode resistance is small, and to provide a method of reducing the resistance of the semiconductor device. SOLUTION: The semiconductor device is a MOS field-effect transistor with a gate electrode of a two-layer structure in which a first gate-electrode layer and a second gate-electrode layer are stacked sequentially from the semiconductor substrate side. Supposing that the interface resistance per unit area of the interface between the first gate-electrode layer and the second gate-electrode layer is Ri, the sheet resistance of the second gate-electrode layer is Rs, and the gate-electrode width normal to the channel of the MOS field-effect transistor is W; the gate width W that can minimizes the gate-electrode resistance ranges (Wm/2)<W<(4Wm), where Wm=(3Ri/Rs)<SP>1/2</SP>. COPYRIGHT: (C)2007,JPO&INPIT
|
