发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To ensure a joint strength by scattering a stress in joining a protruding electrode and a terminal electrode. SOLUTION: An indented area 2a is formed not only on a joint surface of a wiring pattern 2, and also an indented area 5a is formed on that of a protruding electrode 5. The protruding electrode 5 is joined to the wiring pattern 2 by applying supersonic vibration to the protruding electrode 5 during heating the electrode 5 via a bonding tool 11. Height differences H2 and H1 in the indented areas 2a and 5a formed in the joint surface of the wiring pattern 2 and protruding electrode 5 are controlled not only so as to be 0.1μm or more, but also so as to be smaller than the amplitude in supersonic vibration. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007073817(A) 申请公布日期 2007.03.22
申请号 JP20050260682 申请日期 2005.09.08
申请人 SEIKO EPSON CORP 发明人 TAJIMI SHIGEHISA
分类号 H01L21/60;H01L21/607 主分类号 H01L21/60
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