| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a deposited film, which is excellent in productivity and by which the generation of the exfoliation of a deposited film deposited on the inner wall of a dielectric material constituting a portion of a reaction vessel can be suppressed even when the dielectric material is used repeatedly by efficiently removing the deposited film deposited on the inner wall. SOLUTION: In the method for forming the deposited film, comprising arranging a base body in the reaction vessel at least a portion of which is constituted of the dielectric material and which can be evacuated, and decomposing a raw material gas supplied into the reaction vessel by high-frequency power to form a deposited film containing a first layer comprising a non-single crystal film containing nitrogen atom or carbon atom in the matrix of silicon atom on the base body, the deposited film deposited on the part of the dielectric material of the reaction vessel is removed by liquid etching in a pre-treatment process and by liquid honing in a post-treatment process after completion of forming the deposited film. COPYRIGHT: (C)2007,JPO&INPIT
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