| 摘要 |
A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N, wherein x is greater than 0.04 and less than 0.45. The channel is formed near the interface between the channel layer and the carrier supply layer or depleted, the carrier supply layer has a band gap energy greater than that of the channel layer, and x in the formula Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N decreases monotonically with an increase in the distance from the interface. The channel layer may be crystalline of gallium nitride. The channel layer may be undoped. X of the formula Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N of the carrier supply layer is greater than or equal to 0.15 and less than or equal to 0.40 at the interface.
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