发明名称 |
Interconnect structure and method of manufacturing the same |
摘要 |
The invention is directed to a method for manufacturing an interconnect structure suitable for a substrate having a semiconductor device formed thereon, wherein the semiconductor device possesses a metal silicide layer predetermined as an electrically connecting region. The method comprises steps of forming a conformal adhesion layer over the substrate, forming a dielectric layer on the conformal adhesion layer and then performing a chemical mechanical polishing process to planarize the dielectric layer. Further, an opening penetrating through the dielectric layer and the conformal adhesion layer is formed, wherein the opening exposes a portion of the metal silicide layer. A conductive plug is formed in the opening.
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申请公布号 |
US2007063349(A1) |
申请公布日期 |
2007.03.22 |
申请号 |
US20050231264 |
申请日期 |
2005.09.19 |
申请人 |
KAO TSUI-LIEN;TSAI HUEI-JU;WANG SHYAN-YHU;LIN JY-HWANG |
发明人 |
KAO TSUI-LIEN;TSAI HUEI-JU;WANG SHYAN-YHU;LIN JY-HWANG |
分类号 |
H01L21/4763;H01L21/44;H01L23/48 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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