| 摘要 |
A plasma CVD apparatus for forming a thin film on a wafer having diameter Dw and thickness Tw, includes: a vacuum chamber; a shower plate; a top plate; a top mask portion for covering a top surface peripheral portion of the wafer; and a side mask portion for covering a side surface portion of the wafer. The side mask portion has an inner diameter of Dw+alpha, and the top mask portion is disposed at a clearance of Tw+beta between a bottom surface of the top mask portion and a wafer-supporting surface of the top plate, wherein alpha is more than zero, and beta is more than zero.
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