A process for producing a pattern in a radiation sensitive fluoropolymer resist, comprises depositing a layer of the radiation sensitive fluoropolymer resist on a face of a substrate. The radiation sensitive fluoropolymer resist is exposed to an electron beam to define the pattern, the resist then having an exposed fluoropolymer resist area defining the pattern and an unexposed fluoropolymer resist area. The exposed fluoropolymer resist area is finally removed by contacting the radiation sensitive fluoropolymer resist with an alkaline polar aprotic solvent system leaving only the unexposed fluoropolymer resist area on the substrate.
