| 发明名称 |
WIRING STRUCTURE AND SEMICONDUCTOR DEVICE AND PRODUCTION METHODS THEREOF |
| 摘要 |
<p>A semiconductor device which is used to form, during a multilayer interconnection forming process, a high-strength, porous modified layer having a hole diameter of up to 1 nm by forming via holes and wiring grooves in the insulating film between via layers and in the insulating film between wiring layers, and then irradiating an opening side wall with an electron beam or a ultraviolet ray.</p> |
| 申请公布号 |
WO2007032563(A1) |
申请公布日期 |
2007.03.22 |
| 申请号 |
WO2006JP318799 |
申请日期 |
2006.09.15 |
| 申请人 |
NEC CORPORATION;ITOU, FUMINORI;HAYASHI, YOSHIHIRO;TAKEUCHI, TSUNEO |
发明人 |
ITOU, FUMINORI;HAYASHI, YOSHIHIRO;TAKEUCHI, TSUNEO |
| 分类号 |
H01L21/768;H01L21/316;H01L23/522 |
主分类号 |
H01L21/768 |
| 代理机构 |
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