Semiconductor component and production process for high current or voltage devices has front and rear contacts and divided edge zone around cell field region

摘要

A semiconductor component comprises a doped body (23) with a cell field (35) and edge (36) regions between front and rear contacts (21,22), an oppositely doped emitter zone (24), blocking pn junction and edge zone (37) so oppositely doped as to give a breakthrough place outside the edge zone. The edge zone is spaced from the emitter and divided into at least two sub-zones (38,39), and there is a passivation layer (42) of semi-insulating material on the edge zone. An independent claim is also included for a production process for the above.