HIGH PERFORMANCE ORGANIC THIN FILM TRANSISTOR

摘要

An organic thin film transistor has a gate electrode on which a gate insulator is formed, a layer of organic semiconducting material formed on the gate insulator and a source electrode and a drain electrode formed on the layer of organic semiconducting material. The source and/or drain electrode have a layer of transition-metal oxide formed on the organic semiconducting material and a layer of metal formed on the layer of transition-metal oxide. A method of producing an organic thin film transistor includes providing a gate electrode on which a gate insulator is formed, forming a layer of semiconducting material on the gate insulator, and forming a source electrode and a drain electrode on the layer of organic semiconducting material. Forming the source electrode and/or drain electrode include forming a layer of transition metal oxide on the organic semiconducting material and forming a layer of metal on the layer of transition- metal oxide.