METHOD FOR MANUFACTURE OF DIELECTRIC FILM HAVING ABOx TYPE of PEROVSKITE-TYPE CRYSTALLINE STRUCTURE

摘要

A constituent solution for formation of a dielectric body is applied onto a first thin film (31) and then heated/fired, wherein the first thin film (31) has an ABOx type of perovskite-type crystalline structure and contains voids (42) having an average diameter equal to or larger than a predetermined value and the constituent solution contains particles each of which has an ABOx type of perovskite-type crystalline structure and which has an average particle diameter smaller than the average diameter of the voids (42). As a result, a second thin film (32) having an ABOx type of perovskite-type crystalline structure. In this manner, a dielectric film having an ABOx type of perovskite-type structure and composed of a laminate of films each having an ABOx type of perovskite-type structure can be manufactured. The boundary area between the first thin film (31) and the second thin film (32) in the dielectric film becomes dense, since a part of the constituent solution is incorporated into the voids (42) during the application of the constituent solution.