| 摘要 |
A method for fabricating a semiconductor device is provided to increase the effective width of a channel without deteriorating a trench filling characteristic in forming an isolation layer by increasing the width of the center part of an active region by a selective epitaxial growth process without reducing the area of an isolation region. A silicon substrate(300) is prepared which has an isolation layer(301) for defining an active region. Both sides of the active region are partially and lengthwise etched to protrude the center part of the active region. A silicon growth stop layer(305) is formed on the substrate. The silicon growth stop layer and the isolation layer under the silicon growth stop layer are partially etched to expose at lest one side surface of the protruding center part along the widthwise direction of the active region. A silicon layer is grown on the side surface of the center part of the exposed active region by a selective epitaxial growth process to expand the center part of the active region. The silicon growth stop layer is removed. A gate is formed on the step part of the expanded active region. The silicon growth stop layer can be made of an oxide layer or a nitride layer, having a thickness of 50~3000 angstroms.
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