发明名称 STRUCTURE OF SEMICONDUCTOR ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide flexibility in arrangement of a pad electrode by dividing the pad electrode into a plurality of pad electrodes, and then forming a bump electrode so as to connect the pad electrodes to each other. <P>SOLUTION: In this structure of a semiconductor element, the pad electrode 20 is divided into pads electrodes 20a and 20b. A base metal layer 40 is formed independently on the divided pad electrodes 20a and 20b. Then, the bump electrode 50 is bridged over between the pad electrodes 20a and 20b so as to connect them. Between the bump electrode 50 and the element, there is a free space formed between the pad electrodes 20a and 20b. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007073629(A) 申请公布日期 2007.03.22
申请号 JP20050256809 申请日期 2005.09.05
申请人 RENESAS TECHNOLOGY CORP 发明人 YANO MASAYUKI;BAN KAZUHIRO
分类号 H01L21/60 主分类号 H01L21/60
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