| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the takeout efficiency of light emitted from a luminous layer, and also to improve the external quantum efficiency of a light-emitting element by a gallium-nitride-based compound semiconductor without performing any complex processes, such as the formation of an irregular structure by dry etching and the removal of a substrate. <P>SOLUTION: In the light-emitting element, a semiconductor layer containing an n-type gallium-nitride-based compound semiconductor layer 12, a p-type gallium-nitride-based compound semiconductor layer 14, and a luminous layer 13 made of a gallium-nitride-based compound semiconductor, is formed on the upper surface of the substrate 10, wherein a through-hole 17 through upper and lower surfaces to a semiconductor layer on a substrate 10 is formed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
